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SSM5N03FE Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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SSM5N03FE Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 5 page ![]() SSM5N03FE 2007-11-01 3 (Q1, Q2 Common) Drain–source voltage VDS (V) ID – VDS Drain–source voltage VDS (V) ID – VDS (low-voltage region) Drain–source voltage VDS (V) IDR – VDS Gate–source voltage VGS (V) ID – VGS Drain current ID (mA) ⎪Yfs⎪ – ID Drain–source voltage VDS (V) C – VDS Common Source VDS = 3 V Ta = 25°C 5 1 300 100 3 5 10 30 50 10 30 50 100 Common Source VGS = 0 f = 1 MHz Ta = 25°C 100 1 0.1 30 Ciss Coss Crss 0.3 1 3 10 3 5 10 30 50 Common Source VDS = 3 V 1000 0.01 0 3 −25°C 25°C Ta = 100°C 0.5 1 1.5 2 2.5 0.1 1 10 100 100 0 0 Common Source Ta = 25°C 1.8 4.0 VGS = 1.4 V 1.6 2.2 2.0 2.5 20 40 60 80 0.2 0.4 0.6 0.8 1.0 0 0 Common Source Ta = 25°C 1.8 1.9 VGS = 1.4 V 100 1.6 1.7 2.0 2.5 2 4 6 8 10 20 40 60 80 0.01 0 100 −1.2 −1.0 −0.8 −0.6 −0.4 −0.2 0.1 1 10 Common Source VGS = 0 Ta = 25°C IDR D G S |
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