SSM5N03FE datasheet(2/5 Pages) TOSHIBA

2 / 5 page

SSM5N03FE

2007-11-01

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 10 V, VDS = 0 V

⎯

μA

Drain–source breakdown voltage

V (BR) DSS

ID = 100 μA, VGS = 0 V

⎯

Drain cutoff current

IDSS

VDS = 20 V, VGS = 0 V

⎯

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.7

⎯

1.3

Forward transfer admittance

|Yfs|

VDS = 3 V, ID = 10 mA

⎯

Drain–source ON-resistance

RDS (ON)

ID = 10 mA, VGS = 2.5 V

⎯

Input capacitance

Ciss

VDS = 3 V, VGS = 0 V, f = 1 MHz

⎯

11.0

⎯

Reverse transfer capacitance

Crss

VDS = 3 V, VGS = 0 V, f = 1 MHz

⎯

3.3

⎯

Output capacitance

Coss

VDS = 3 V, VGS = 0 V, f = 1 MHz

⎯

9.3

⎯

Turn-on time

ton

VDD = 3 V, ID = 10 mA,

VGS = 0 to 2.5 V

⎯

0.16

⎯

Switching time

Turn-off time

toff

VDD = 3 V, ID = 10 mA,

VGS = 0 to 2.5 V

⎯

0.19

⎯

μs

Switching Time Test Circuit

Precaution

Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for

this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower

voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)

Take this into consideration when using the device.

ton

toff

(b) VIN

VGS

VDS

2.5 V

VDD

VDS (ON)

10%

90%

10%

(a) Test circuit

2.5 V

Input

Output

VDD

μs

VIN

VDD = 3 V

D.U. <= 1%

Input: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

= 25°C

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