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TAR5S21 Datasheet(PDF) 21 Page - Toshiba Semiconductor |
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TAR5S21 Datasheet(HTML) 21 Page - Toshiba Semiconductor |
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21 / 23 page ![]() TAR5S15~TAR5S50 2007-11-01 21 Ambient temperature Ta (°C) PD – Ta −40 0 0 40 120 80 100 200 300 400 ① Circuit board material: glass epoxy, Circuit board dimention: 30 mm × 30 mm, pad area: 50 mm 2 (t = 0.8 mm) ② Unit ② ① Frequency f (Hz) VN – f VIN = VOUT + 1 V, IOUT = 10 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, 10 Hz < f < 100 kHz, Ta = 25°C 10 1 0.1 0.01 0.001 10 100 1 k 10 k 100 k Frequency f (Hz) Ripple Rejection – f 0 10 20 60 70 80 30 40 50 10 100 1 k 10 k 100 k 1000 k VIN = VOUT + 1 V, IOUT = 10 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, VRipple = 500 mVp-p, Ta = 25°C TAR5S15 (1.5 V) TAR5S30 (3.0 V) TAR5S50 (5.0 V) TAR5S45 (4.5 V) TAR5S35 (3.5 V) TAR5S25 (2.5 V) |
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