30-6000 MHz Flat Gain BroadBand AMP

BBA03

1

Rev. 3.4

BeRex

●website: www.berex.com

●email: sales@berex.com

Specifications and information are subject to change without notice. BeRex is a trademark of BeRex.

All other trademarks are the property of their respective owners. © 2024 BeRex

• Gain = 14.7 dB @ 900MHz

• OIP3 = 39.7 dBm @ 900 MHz

• Output P1 dB = 20.5 dBm @ 900 MHz

• N.F = 1.85dB @ 900 MHz

• Internally matched to 50 ohms

• RoHS2-compliant SOT-89 SMT package

The BBA03 is a BroadBand, GaAs E-pHEMT Ampli-

fier that is ideal for applications demanding high

linearity and gain flatness in a bandwidth of 30-

6000 MHz. The BBA03 is internally matched to 50

Ohms and requires no external matching compo-

nents. It is available in RoHS2-compliant SOT-89

SMT package. These devices are 100% DC and RF

tested to assure quality and performance.

Product Description

Device Features

• Repeaters

• Mobile Infrastructure

• Defense/Aerospace

• LTE / WCDMA / EDGE / CDMA

• General Purpose Wireless

• IF amplifier, RF driver amplifier

Applications

Applications Circuit

BOM

0.03~1.5

0.5~4.0

1.5~3.5

4.0~5.0

C1

2.2nF

100pF

22pF

22pF

C2

2.2nF

100pF

22pF

22pF

C3

100pF

100pF

100pF

100pF

C4

1uF

1uF

1uF

1uF

C5

NC

NC

NC

0.3pF

L1

1uH

22nH

5.6nH

18nH

Electrical Specifications

Absolute Maximum Ratings

Parameter

Rating

Unit

Storage Temperature

-55 to +155

°C

Junction Temperature

+170

°C

Supply Voltage

+7

V

Supply Current

190

mA

Input RF Power

20

dBm

20

Operation of this device above any of these parameters may result in permanent damage.

Parameter

Min

Typ

Max

Unit

Bandwidth

30

6000

MHz

Id @ (Vd = 5V)

80

100

120

mA

Vd

4.75

5.0

5.25

V

dG/dT

-0.003

dB/°C

RTH

40.1

°C/W

Operating Case Temperature

-40

+105

°C

Recommended Operating Conditions

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating conditions.

Device performance _ measured on a BeRex evaluation board at 25°C, Vd=5V, 50 Ω system.

Parameter

Conditions

Min

Typ

Max

Unit

Operational

Frequency Range

30

6000

MHz

Test Frequency

900

MHz

Gain

13.2

14.7

dB

Input Return Loss

-14.3

dB

Output Return Loss

-12.6

dB

Output IP3

6 dBm / tone ,

Δf=1 MHz

36.7

39.7

dBm

Output P1dB

19.5

20.5

dBm

LTE 20M ACLR

*

9.5

10.5

dBm

Noise Figure

1.85

dB

- LTE set-up: 3GPP LTE, FDD E-TM3.1, 20MHz BW, ±20MHz offset, PAR 9.75 at 0.01% Prob.

*ACLR Channel Power measured at -50dBc.