CMD262

26-28 GHz GaN Power Amplifier

Data Sheet Rev. A, June 14, 2022 | Subject to change without notice

7 of 9

www.qorvo.com

®

Applications Information

Assembly Guidelines

The backside of the CMD262 is RF ground. Die attach should be accomplished with electrically and thermally conductive

epoxy or eutectic attach. Standard assembly procedures should be followed for high frequency devices. The top surface of

the semiconductor should be made planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed

in close proximity to the DC connections on chip.

RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use of a 0.8 mil

thermosonic wedge bonding is highly recommended as the loop height will be minimized. The RF input and output require

double bond wires as shown.

The semiconductor is 100 um thick and should be handled by the sides of the die or with a custom collet. Do not make

contact directly with the die surface as this will damage the monolithic circuitry. Handle with care.

Assembly Diagram

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge.

Proper precautions should be observed during handling, assembly and test.

to Vgg

100,000 pF CHIP CAP

100 pF CHIP CAP

to Vdd

100 pF CHIP CAP

100,000 pF CHIP CAP

(example: Presidio part

MVB4080X104ZGK5R3L)

(example: Presidio part

LSA1515B101M2H5R-L)

RF out

RF in