CMD262

26-28 GHz GaN Power Amplifier

Data Sheet Rev. A, June 14, 2022 | Subject to change without notice

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Absolute Maximum Ratings

Parameter

Rating

Drain Voltage, Vdd

32 V

Gate Voltage, Vgg1, 2, 3

-10 V

RF Input Power

+25 dBm

Channel Temperature, Tch

175 ºC

Power Dissipation, Pdiss

18.2 W

Thermal Resistance,

θJC

4.93 ºC/W

Operating Temperature

-55 to 85 °C

Storage Temperature

-55 to 150 °C

Exceeding any one or combination of the maximum ratings may cause

permanent damage to the device.

Recommended Operating Conditions

Parameter

Min

Typ

Max

Units

Vdd

20

28

30

V

Idd

350

mA

Vgg1, 2, 3

-5

-4

-3

V

Electrical performance is measured at specific test conditions.

Electrical specifications are not guaranteed over all recommended

operating conditions.

Electrical Performance (Vdd = 28 V, Vgg1 = Vgg2 = Vgg3 = -4 V, TA = 25 oC)

)

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Parameter

Min

Typ

Max

Units

Frequency Range

26 - 28

GHz

Gain

19

24

dB

Input Return Loss

15

dB

Output Return Loss

11

dB

Output P1dB

34

37

dBm

Psat

38

dBm

Power Added Efficiency

28

%

Supply Current

250

350

450

mA