TC9329AFAG datasheet(13/83 Pages) TOSHIBA

13 / 83 page

TC9329AFAG/AFCG

2006-03-02

5. Data Memory (RAM)

The data memory consists of 4 bit

× 256 words and is used for storing data. These 256 words are

expressed in row addresses (4 bits) and column addresses (4 bits). 192 words (row address

= address 004H

~ 00FH) within the data memory are addressed indirectly by the G-register. Owing to this, it is necessary

to specify the row address with the G-register before the data in this area can be processed.

The address 00H ~ 0FH within the data memory are known as general registers, and these can be used

simply by specifying the relevant column address (4 bit). These sixteen general registers can be used for

operations and transfers with the data memory, and may also be used as normal data memories.

Note: The column address (4 bit) that specifies the general register is the register number of the general

Note: All row address (addresses 0H ~ FH) can be specified indirectly with the G-register.

Note: The data memory is 256 words and 2 bits of the 6-bit higher ranks of G-register row address are used “0”

(00H ~ 0FH address).

Note: By using LD and ST instructionss, it can be addressed directly in 256 words (row address

= 00H ~ 0FH)

in a data memory.

B C D E

General register

(one from among addresses

00H ~ 0fH)

LD and ST instructions allow low

addresses (0H ~ FH) to be

directly

Indirect specification of

row addresses (4H ~

FH) with the G-register

The indirect

specification of row

address

= 0H ~ FH

is also possible

COLMUN ADDRESS: DC

TC9329AFAG Datasheet(PDF) 13 Page - Toshiba Semiconductor