XC95288XL High Performance CPLD

4

www.xilinx.com

DS055 (v2.1 April 3, 2007

1-800-255-7778

Product Specification

R

Absolute Maximum Ratings(2)

Recommended Operation Conditions

Quality and Reliability Characteristics

DC Characteristic Over Recommended Operating Conditions

Symbol

Description

Value

Units

VCC

Supply voltage relative to GND

–0.5 to 4.0

V

VIN

Input voltage relative to GND(1)

–0.5 to 5.5

V

VTS

Voltage applied to 3-state output(1)

–0.5 to 5.5

V

TSTG

Storage temperature (ambient)(3)

–65 to +150

oC

TJ

Junction temperature

+150

oC

Notes:

1.

Maximum DC undershoot below GND must be limited to either 0.5V or 10 mA, whichever is easier to achieve. During transitions, the

device pins may undershoot to –2.0V or overshoot to +7.0V, provided this over- or undershoot lasts less than 10 ns and with the

forcing current being limited to 200 mA. External I/O voltage may not exceed VCCINT by 4.0V.

2.

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress

ratings only, and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions

is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time may affect device reliability.

3.

For soldering guidelines and thermal considerations, see the Device Packaging information on the Xilinx website. For Pb-free

packages, see XAPP427.

Symbol

Parameter

Min

Max

Units

VCCINT

Supply voltage for internal logic

and input buffers

Commercial TA = 0oC to 70oC3.0

3.6

V

Industrial TA = –40oC to +85oC3.0

3.6

V

VCCIO

Supply voltage for output drivers for 3.3V operation

3.0

3.6

V

Supply voltage for output drivers for 2.5V operation

2.3

2.7

V

VIL

Low-level input voltage

0

0.80

V

VIH

High-level input voltage

2.0

5.5

V

VO

Output voltage

0

VCCIO

V

Symbol

Parameter

Min

Max

Units

TDR

Data Retention

20

-

Years

NPE

Program/Erase Cycles (Endurance)

10,000

-

Cycles

VESD

Electrostatic Discharge (ESD)

2,000

-

Volts

Symbol

Parameter

Test Conditions

Min

Max

Units

VOH

Output high voltage for 3.3V outputs

IOH = –4.0 mA

2.4

-

V

Output high voltage for 2.5V outputs

IOH = –500 μA90% VCCIO

-V

VOL

Output low voltage for 3.3V outputs

IOL = 8.0 mA

-

0.4

V

Output low voltage for 2.5V outputs

IOL = 500 μA-

0.4

V

IIL

Input leakage current

VCC = Max; VIN = GND or VCC

-±10

μA

IIH

I/O high-Z leakage current

VCC = Max; VIN = GND or VCC

-±10

μA

IIH

I/O high-Z leakage current

VCC = Max; VCCIO = Max;

VIN = GND or 3.6V

-±10

μA

VCC Min < VIN < 5.5V

-

±50

μA

CIN

I/O capacitance

VIN = GND; f = 1.0 MHz

-

10

pF

ICC

Operating supply current

(low power mode, active)

VIN = GND, No load; f = 1.0 MHz

85 (Typical)

mA