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TLP124 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP124 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 8 page ![]() TLP124 2007-10-01 3 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 48 V Forward current IF ― 1.6 20 mA Collector current IC ― 1 10 mA Operating temperature Topr −25 ― 75 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Collector −emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 ― ― V Emitter −collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V VCE = 48 V ― 10 100 nA Collector dark current ID VCE = 48 V, Ta = 85°C ― 2 50 μA Capacitance collector to emitter CCE V = 0, f = 1 MHz ― 12 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit 100 ― 1200 Current transfer ratio IC / IF IF = 1mA, VCE = 0.5 V Rank BV 200 ― 1200 % 50 ― ― Low input CTR IC / IF (low) IF = 0.5 mA, VCE = 1.5 V Rank BV 100 ― ― % IC = 0.5 mA, IF = 1 mA ― ― 0.4 ― 0.2 ― Collector −emitter saturation voltage VCE (sat) IC = 1 mA, IF = 1 mA Rank BV ― ― 0.4 V Off −state collector current IC(off) VF = 0.7V, VCE = 48 V ― ― 10 μA Coupled Electrical Characteristics (Ta = −25~75°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit 50 ― ― % Current transfer ratio IC / IF IF = 1mA, VCE = 0.5 V Rank BV 100 ― ― % ― 50 ― % Low input CTR IC / IF (low) IF = 0.5 mA, VCE = 1.5 V Rank BV ― 100 ― % |
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