2

ISO120/121

SPECIFICATIONS

ELECTRICAL

At T

A = +25°C: VS1 = VS2 = ±15V: and RL = 2kΩ, unless otherwise noted.

*Specifications same as ISO120BG, ISO121BG.

NOTE: (1) Input voltage range =

±10V for V

S1, VS2 = ±4.5VDC to ±18VDC. (2) Ripple frequency is at carrier frequency. (3) Overload recovery is approximately three times

the settling time for other values of C

2. (4) The SG-grade is specified –55°C to +125°C; performance of the SG in the –25°C to +85°C temperature range is the same

as the BG-grade.

ISO120BG, ISO121BG

ISO120G, ISO120SG(4), ISO121G

PARAMETER

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

ISOLATION

Voltage Rated Continuous ISO120: AC 60Hz

T

MIN to TMAX

1500

*

Vrms

DC

T

MIN to TMAX

2121

*

VDC

ISO121: AC 60Hz

T

MIN to TMAX

3500

*

Vrms

DC

T

MIN to TMAX

4950

*

VDC

100% Test (AC 60Hz): ISO120

1s; Partial Discharge

≤ 5pC

2500

*

Vrms

ISO121

1s; Partial Discharge

≤ 5pC

5600

*

Vrms

Isolation Mode Rejection ISO 120: AC 60Hz

1500Vrms

115

*

dB

DC

160

*

dB

ISO121: AC60Hz

3500Vrms

115

*

dB

DC

160

*

dB

Barrier Impedance

1014 || 2

*

Ω || pF

Leakage Current

V

ISO = 240Vrms, 60Hz

0.18

0.5

*

*

µArms

GAIN(4)

V

O = ±10V

Nominal Gain

C

1 = C2 = 1000pF

1

1

V/V

Gain Error

±0.04

±0.1

±0.05

±0.25

%FSR

Gain vs Temperature

±5

±20

±10

±40

ppm/

°C

Nonlinearity

±0.005

±0.01

±0.01

±0.05

%FSR

Nominal Gain

C

1 = C2 = 0

1

1

V/V

Gain Error

±0.04

±0.25

±0.05

±0.25

%FSR

Gain vs Temperature

±40

±40

ppm/

°C

Nonlinearity

±0.02

±0.1

±0.04

±0.1

%FSR

INPUT OFFSET VOLTAGE(4)

Initial Offset

C

1 = C2 = 1000pF

±5

±25

±10

±50

mV

vs Temperature

±100

±150

±150

±400

µV/°C

Initial Offset

C

1 = C2 = 0

±25

±100

±40

±100

mV

vs Temperature

±250

±500

µV/°C

Initial Offset

vs Supply

±V

S1 or ±VS2 = ±4.5V to ±18V

±2

±2

mV/V

Noise

44

µV/√Hz

INPUT

Voltage Range(1)

±10

±15

*

*

V

Resistance

200

*

k

Ω

OUTPUT

Voltage Range

±10

±12.5

*

*

V

Current Drive

±5

±15

*

*

mA

Capacitive Load Drive

0.1

*

µF

Ripple Voltage(2)

10

*

mVp-p

FREQUENCY RESPONSE

Small Signal Bandwith

C

1 = C2 = 0

60

*

kHz

C

1 = C2 = 1000pF

6

*

kHz

Slew Rate

2*

V/

µs

Settling Time

V

O = ±10V

0.1%

C

2 = 100pF

50

*

µs

0.01%

C

1 = C2 = 1000pF

350

*

µs

Overload Recovery Time(3)

50% Output Overload,

150

*

µs

C

1 = C2 = 0

POWER SUPPLIES

Rated Voltage

15

*

V

Voltage Range

±4.5

±18

*

*

V

Quiescent Current: V

S1

±4.0

±5.5

*

*

mA

V

S2

±5.0

±6.5

*

*

mA

TEMPERATURE RANGE

Specification: BG and G

–25

85

–25

85

°C

SG(4)

–25

85

–55

125

°C

Operating

–55

125

–55

125

°C

Storage

–65

150

–55

150

°C

θ

JA: ISO120

40

40

°C/W

ISO121

25

25

°C/W