S25FL128SDPMFIF datasheet(8/149 Pages) CYPRESS

8 / 149 page

Document Number: 001-98283 Rev. *M

Page 7 of 148

S25FL128S/S25FL256S

1.3

Glossary

1.4

Other Resources

1.4.1

Cypress Flash Memory Roadmap

www.cypress.com/product-roadmaps/cypress-flash-memory-roadmap

1.4.2

Links to Software

www.cypress.com/software-and-drivers-cypress-flash-memory

1.4.3

Links to Application Notes

www.cypress.com/appnotes

Command

All information transferred between the host system and memory during one period while CS# is low. This includes the instruction

(sometimes called an operation code or opcode) and any required address, mode bits, latency cycles, or data.

DDP

(Dual Die Package)

Two die stacked within the same package to increase the memory capacity of a single package. Often also referred to as a Multi-Chip

Package (MCP)

DDR

(Double Data Rate)

When input and output are latched on every edge of SCK.

ECC

ECC Unit = 16 byte aligned and length data groups in the main Flash array and OTP array, each of which has its own hidden ECC

syndrome to enable error correction on each group.

Flash

The name for a type of Electrical Erase Programmable Read Only Memory (EEPROM) that erases large blocks of memory bits in

parallel, making the erase operation much faster than early EEPROM.

High

A signal voltage level ≥ VIH or a logic level representing a binary one (1).

Instruction

The 8 bit code indicating the function to be performed by a command (sometimes called an operation code or opcode). The instruction

is always the first 8 bits transferred from host system to the memory in any command.

Low

A signal voltage level

 VIL or a logic level representing a binary zero (0).

LSB

(Least Significant Bit)

Generally the right most bit, with the lowest order of magnitude value, within a group of bits of a register or data value.

MSB

(Most Significant Bit)

Generally the left most bit, with the highest order of magnitude value, within a group of bits of a register or data value.

Non-Volatile

No power is needed to maintain data stored in the memory.

OPN

(Ordering Part Number)

The alphanumeric string specifying the memory device type, density, package, factory non-volatile configuration, etc. used to select the

desired device.

Page

512 bytes or 256 bytes aligned and length group of data. The size assigned for a page depends on the Ordering Part Number.

PCB

Printed Circuit Board

PPAP

Production Part Approval Process

Are in the format: Register_name[bit_number] or Register_name[bit_range_MSB: bit_range_LSB]

SDR

(Single Data Rate)

When input is latched on the rising edge and output on the falling edge of SCK.

Sector

Erase unit size; depending on device model and sector location this may be 4 kbytes, 64 kbytes or 256 kbytes.

Write

An operation that changes data within volatile or non-volatile registers bits or non-volatile flash memory. When changing non-volatile

data, an erase and reprogramming of any unchanged non-volatile data is done, as part of the operation, such that the non-volatile data

is modified by the write operation, in the same way that volatile data is modified – as a single operation. The non-volatile data appears

to the host system to be updated by the single write command, without the need for separate commands for erase and reprogram of

adjacent, but unaffected data.

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