PNP

Transistor

General Purpose

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Page <1>

02/11/22

V1.1

Parameter

Collector - Base Voltage - BC856

BC857

BC858

Collector - Emitter Voltage - BC856

BC857

BC858

Emitter - Base Voltage

Collector Current - Continuous

Collector Dissipation

Junction and Storage Temperature

Symbol

VCBO

Values

-80

-50

-30

-65

-45

-30

-5

-0.1

250

-65 to +150

Unit

V

VCEO

VEBO

IC

PC

TJ, TSTG

A

mW

°C

Parameter

Symbol

Test Conditions

V(BR)CBO

IC = -10µA IB=0

hFE

VCE = -5V, Ic = -2mA

Min.

-80

-50

-30

-65

-45

-30

-5

-

-

125

125

220

420

Typ.

Max.

Unit

IC = -10µA IE=0

Collector-Base Breakdown Voltage

BC856

BC857

BC858

BC856

BC857

BC858

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

Emiter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain BC856, 857

BC856A, 857A, 858A

BC856B, 857B, 858B

BC857C, 858C

V(BR)EBO

ICBO

IEBO

IE = -1µA IC = 0

VCB = -30V IE = 0

VEB = -5V, IC = 0

-

-1

-

-

-

-15

-0.1

475

250

475

800

-0.65

-0.3

nA

µA

-

Collector-Emitter Saturation Voltage

VCE(sat)

Base - Emitter Saturation Voltage

VBE(sat)

Ic = -100mA, IB = -5mA

Ic = -10mA, IB = -0.5mA

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5mA

IC = -2mA, VCE = -5V

IC = -10mA, VCE = -5V

-

-

V

-

-0.7

-0.85

-

V

Base Emitter Voltage

VBE

-0.6

-0.65

-0.75

-0.82

V

Features

• Low current (maximum 100mA)

• Low voltage (maximum 65V)

Applications

• General purpose switching and amplification

Max. Ratings and Characteristics: TAMB = 25°C unless otherwise specified