T2035H datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

T2035H Series

2/10

Characteristics

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (full sine wave)

Tc = 127° C

ITSM

Non repetitive surge peak on-state current

(full cycle sine wave, Tj initial = 25° C)

F = 60 Hz

t = 16.7 ms

210

F = 50 Hz

t = 20 ms

200

I²t

I²t Value for fusing

tp = 10 ms

283

A2s

dI/dt

Critical rate of rise of on-state current

IG = 2xIGT, tr ≤100 ns

F = 120 Hz

Tj = 125° C

A/µs

VDSM/VRSM

Non repetitive surge peak off state voltage

Tj = 25° C

700

IGM

Peak gate current

tp = 20 µs

Tj = 150° C

PG(AV)

Average gate power dissipation

Tj = 150° C

Tstg

Storage junction temperature range

Operating junction temperature range

-40 to +150

-30 to +150

°C

Maximum leads soldering temperature during 10 s

260

°C

Table 2.

Electrical characteristics (Tj = 25° C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Value

Unit

IGT

(1)

VD = 12 V, RL = 33 Ω

I - II - III

MAX

VGT

I - II - III

MAX

1.3

VGD

VD = VDRM, RL =3.3 kΩ, Tj = 150° C

I - II - III

MIN

0.15

(2)

IT = 100 mA

MAX

IG = 1.2 x IGT

I - III

MAX

dV/dt (2)

VD = 67% VDRM, gate open, Tj = 150° C

MIN

300

V/µs

(dI/dt)c (2)

Without snubber, Tj = 150° C

MIN

8.9

A/ms

minimum IGT is guaranteed at 5% of IGT max

for both polarities of A2 referenced to A1

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