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SIC1182KQ Datasheet(PDF) 1 Page - Power Integrations, Inc.

Part # SIC1182KQ
Description  Up to 8 A Single Channel SiC MOSFET and IGBT Gate
PDF  18 Pages
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Manufacturer  POWERINT [Power Integrations, Inc.]
Direct Link  http://www.powerint.com
Logo POWERINT - Power Integrations, Inc.

SIC1182KQ Datasheet(HTML) 1 Page - Power Integrations, Inc.

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December 2022
Up to 8 A Single Channel SiC MOSFET and IGBT Gate
Driver for Automotive Applications Providing Advanced
Active Clamping and Reinforced Isolation up to 1200 V
SIC1181KQ / SIC1182KQ
SCALE-iDriver Family
This Product is Covered by Patents and/or Pending Patent Applications.
Product Highlights
Highly Integrated, Compact Footprint
• ±8 A peak gate output current
• Integrated FluxLink™ technology providing reinforced isolation
• SiC MOSFET optimized Advanced Active Clamping
• Ultrafast short-circuit detection
• UVLO primary and secondary side
• Rail-to-rail stabilized output voltage
• Unipolar supply voltage for secondary-side
• Up to 150 kHz switching frequency
• Propagation delay jitter ±5 ns
• -40 °C to +125 °C operating ambient temperature
• High common-mode transient immunity
• eSOP package with 9.5 mm creepage and clearance, CTI 600
Protection / Safety Features
• Undervoltage lock-out protection for primary and secondary-side
including fault feedback
• Over-current detection for SiC MOSFETs with current-sense terminal
• Ultrafast short-circuit monitoring, turn-off and reporting
• Overvoltage limitation during SiC MOSFET turn-off
Full Safety and Regulatory Compliance
• 100% production partial discharge test
• 100% production HIPOT compliance testing at 8000 V peak for 1 s
• Reinforced insulation VDE V 0884-17 pending
• UL 1577 recognized
• AEC Q-100 qualified for automotive grade level 1
Green Package
• Halogen free and RoHS compliant
Applications
• Electric vehicle BEV traction drives
• Hybrid electric vehicle PHEV traction drives
• Electric vehicle on-board and off-board chargers
Figure 1. Typical Application Schematic.
Description
The SIC1181KQ and SIC1182KQ are single channel gate drivers for
SiC MOSFETs. Reinforced galvanic isolation is provided by Power
Integrations’ revolutionary solid insulator FluxLink technology. Up to
±8 A peak output drive current enables the product to drive devices
with nominal currents of up to 600 / 800 A (typical).
Additional features such as undervoltage lock-out (UVLO) for
primary-side and secondary-side and rail-to-rail output with tempera-
ture and process compensated output impedance guarantee safe
operation even in harsh conditions.
Furthermore, this gate driver IC comes along with short-circuit protection
(at and during turn-on phase) as well as overvoltage limitation by AAC
advanced active clamping (at turn-off phase) through a single sensing
pin. For SIC MOSFET with current-sense terminal, an adjustable
over-current detection can be realized.
Product Portfolio
Product1
Peak Output
Drive Current
Switch Rating
SIC1181KQ
8.0 A
750 V
SIC1182KQ
8.0 A
1200 V
Table 1. SCALE-iDriver Portfolio.
Notes:
1. Package: eSOP-R16B.
Figure 2. eSOP-R16B Package.
PI-8897-061219
SCALE-iDriver
Primary-Side
Logic
Secondary-Side
Logic
IN
SO
VCC
VIN
GND
VCC
VTOT
FluxLink
SNS
GH
VISO
VGXX
GL
VEE
COM
RCETH
CCOMPS
+
-
+
-


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