TPS61000, TPS61001, TPS61002, TPS61003

TPS61004, TPS61005, TPS61006, TPS61007

SLVS279D – MARCH 2000 – REVISED AUGUST 2015

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Input voltage (VBAT, VOUT, COMP, FB, LBO, EN, LBI)

–0.3

3.6

V

VI

Input voltage (SW)

–0.3

VOUT + 0.7

V

Peak current into SW

1300

mA

Continuous total power dissipation

See Thermal Information

TA

Operating free-air temperature

–40

85

°C

TJ

Maximum junction temperature

150

°C

Lead temperature

260

°C

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE

UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1000

V(ESD)

Electrostatic discharge

V

Charged-device model (CDM), per JEDEC specification JESD22-

±500

C101(2)

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VBAT

Supply voltage

0.8

VO

V

VBAT = 0.8 V

100

VO

Output current

mA

VBAT = 0.8 V

250

Inductor

10

33

µH

Input capacitor

10

µF

Output capacitor

22

µF

TJ

Operating junction temperature

–40

125

°C

7.4 Thermal Information

TPS6100x

THERMAL METRIC(1)

DGS (VSSOP)

UNIT

10 PINS

RθJA

Junction-to-ambient thermal resistance

160.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

54.4

°C/W

RθJB

Junction-to-board thermal resistance

80.5

°C/W

ψJT

Junction-to-top characterization parameter

6.3

°C/W

ψJB

Junction-to-board characterization parameter

79.2

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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