7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VDD

Supply voltage(2)

6.5

V

All other pins(2)

–0.3

6.5

IOL

Maximum low output current

5

mA

IOH

Maximum high output current

–5

mA

IIK

Input clamp current (VI < 0 or VI > VDD)

±20

mA

IOK

Output clamp current (VO < 0 or VO > VDD)

±20

mA

TA

Operating free-air temperature

–40

85

°C

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2)

All voltage values are with respect to GND. For reliable operation, do not operate the device at 6.5 V for more than t = 1000h

continuously.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

at specified temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VDD

Supply voltage

2

6

V

CIN

VDD bypass capacitor

0.1

µF

TA

Operating free-air temperature range

–40

85

°C

7.4 Thermal Information

THERMAL METRIC(1)

TLV809

UNIT

DBV (SOT-23)

DBZ (SOT-23)

3 PINS

3 PINS

RθJA

Junction-to-ambient thermal resistance

242.1

286.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

213.0

105.6

°C/W

RθJB

Junction-to-board thermal resistance

123.4

124.4

°C/W

ψJT

Junction-to-top characterization parameter

45.7

25.8

°C/W

ψJB

Junction-to-board characterization parameter

130.9

107.9

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

—

—

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

www.ti.com

TLV809

SLVSA03F – JUNE 2010 – REVISED DECEMBER 2020

Copyright © 2020 Texas Instruments Incorporated

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