Electronic Components Datasheet Search
  English  ▼

X  

ISO5852S Datasheet(PDF) 21 Page - Texas Instruments

Part # ISO5852S
Description  ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features
PDF  40 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

ISO5852S Datasheet(HTML) 21 Page - Texas Instruments

Back Button ISO5852S Datasheet HTML 17Page - Texas Instruments ISO5852S Datasheet HTML 18Page - Texas Instruments ISO5852S Datasheet HTML 19Page - Texas Instruments ISO5852S Datasheet HTML 20Page - Texas Instruments ISO5852S Datasheet HTML 21Page - Texas Instruments ISO5852S Datasheet HTML 22Page - Texas Instruments ISO5852S Datasheet HTML 23Page - Texas Instruments ISO5852S Datasheet HTML 24Page - Texas Instruments ISO5852S Datasheet HTML 25Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 21 / 40 page
background image
21
ISO5852S-Q1
www.ti.com
SLLSEQ2A – SEPTEMBER 2016 – REVISED DECEMBER 2016
Product Folder Links: ISO5852S-Q1
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
9.3 Feature Description
9.3.1 Supply and Active Miller Clamp
The ISO5852S-Q1 supports both bipolar and unipolar power supply with active Miller clamp.
For operation with bipolar supplies, the IGBT is turned off with a negative voltage on its gate with respect to its
emitter. This prevents the IGBT from unintentionally turning on because of current induced from its collector to its
gate due to Miller effect. In this condition it is not necessary to connect CLAMP output of the gate driver to the
IGBT gate, but connecting CLAMP output of the gate driver to the IGBT gate is also not an issue. Typical values
of VCC2 and VEE2 for bipolar operation are 15-V and -8-V with respect to GND2.
For operation with unipolar supply, typically, VCC2 is connected to 15-V with respect to GND2, and VEE2 is
connected to GND2. In this use case, the IGBT can turn on due to additional charge from IGBT Miller
capacitance caused by a high voltage slew rate transition on the IGBT collector. To prevent IGBT to turn on, the
CLAMP pin is connected to IGBT gate and Miller current is sinked through a low impedance CLAMP transistor.
Miller CLAMP is designed for Miller current up to 2-A. When the IGBT is turned-off and the gate voltage
transitions below 2-V the CLAMP current output is activated.
9.3.2 Active Output Pulldown
The Active output pulldown feature ensures that the IGBT gate OUTH/L is clamped to VEE2 to ensure safe IGBT
off-state, when the output side is not connected to the power supply.
9.3.3 Undervoltage Lockout (UVLO) With Ready (RDY) Pin Indication Output
Undervoltage Lockout (UVLO) ensures correct switching of IGBT. The IGBT is turned-off, if the supply VCC1
drops below VIT-(UVLO1), irrespective of IN+, IN– and RST input till VCC1 goes above VIT+(UVLO1).
In similar manner, the IGBT is turned-off, if the supply VCC2 drops below VIT-(UVLO2), irrespective of IN+, IN– and
RST input till VCC2 goes above VIT+(UVLO2).
Ready (RDY) pin indicates status of input and output side Under Voltage Lock-Out (UVLO) internal protection
feature. If either side of device have insufficient supply (VCC1 or VCC2), the RDY pin output goes low; otherwise,
RDY pin output is high. RDY pin also serves as an indication to the micro-controller that the device is ready for
operation.
9.3.4 Soft Turnoff, Fault (FLT) and Reset (RST)
During IGBT overcurrent condition, a mute logic initiates a soft-turn-off procedure which disables, OUTH, and
pulls OUTL to low over a time span of 2 μs. When desaturation is active, a fault signal is sent across the isolation
barrier pulling the FLT output at the input side low and blocking the isolator input. mute logic is activated through
the soft-turn-off period. The FLT output condition is latched and can be reset only after RDY goes high, through a
active-low pulse at the RST input. RST has an internal filter to reject noise and glitches. By asserting RST for at-
least the specified minimum duration (800 ns), device input logic can be enabled or disabled.
9.3.5 Short Circuit Clamp
Under short circuit events it is possible that currents are induced back into the gate-driver OUTH/L and CLAMP
pins due to parasitic Miller capacitance between the IGBT collector and gate terminals. Internal protection diodes
on OUTH/L and CLAMP help to sink these currents while clamping the voltages on these pins to values slightly
higher than the output side supply.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com