GND1

VEE2

RST

RDY

FLT

IN+

IN±

VCC1

VCC2

DESAT

GND2

OUTH

OUTL

CLAMP

VCC1

VCC1

UVLO1

Mute

Decoder

Q

S

R

Q

VCC1

VCC1

Gate Drive

and

Encoder

Logic

UVLO2

2 V

9 V

500 µA

STO

VCC2

Ready

Fault

Copyright © 2016, Texas Instruments Incorporated

Product

Folder

Sample &

Buy

Technical

Documents

Tools &

Software

Support &

Community

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

ISO5852S-Q1

SLLSEQ2A – SEPTEMBER 2016 – REVISED DECEMBER 2016

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver

With Split Outputs and Active Protection Features

1

1 Features

1

•

Qualified for Automotive Applications

•

AEC-Q100 Qualified With the Following Results:

–

Device Temperature Grade 1: –40°C to

+125°C Ambient Operating Temperature

Range

–

Device HBM Classification Level 3A

–

Device CDM Classification Level C6

•

100-kV/μs Minimum Common-Mode Transient

Immunity (CMTI) at VCM = 1500 V

•

Split Outputs to Provide 2.5-A Peak Source and

5-A Peak Sink Currents

•

Short Propagation Delay: 76 ns (Typ),

110 ns (Max)

•

2-A Active Miller Clamp

•

Output Short-Circuit Clamp

•

Soft Turn-Off (STO) during Short Circuit

•

Fault Alarm upon Desaturation Detection is

Signaled on FLT and Reset Through RST

•

Input and Output Undervoltage Lockout (UVLO)

with Ready (RDY) Pin Indication

•

Active Output Pulldown and Default Low Outputs

with Low Supply or Floating Inputs

•

2.25-V to 5.5-V Input Supply Voltage

•

15-V to 30-V Output Driver Supply Voltage

•

CMOS Compatible Inputs

•

Rejects Input Pulses and Noise Transients

Shorter Than 20 ns

•

Isolation Surge Withstand Voltage 12800-VPK

•

Safety-Related Certifications:

–

8000-VPK VIOTM and 2121-VPK VIORM

Reinforced Isolation per DIN V VDE V 0884-10

(VDE V 0884-10):2006-12

–

5700-VRMS Isolation for 1 Minute per UL 1577

–

CSA Component Acceptance Notice 5A, IEC

60950–1 and IEC 60601–1 End Equipment

Standards

–

TUV Certification per EN 61010-1 and EN

60950-1

–

GB4943.1-2011 CQC Certification

–

All Certifications Complete per UL, VDE, CQC,

TUV and Planned for CSA

2 Applications

•

Isolated IGBT and MOSFET Drives in:

–

HEV and EV Power Modules

–

Industrial Motor Control Drives

–

Industrial Power Supplies

–

Solar Inverters

–

Induction Heating

3 Description

The ISO5852S-Q1 device is a 5.7-kVRMS, reinforced

isolated gate driver for IGBTs and MOSFETs with

split outputs, OUTH and OUTL, providing 2.5-A

source and 5-A sink current. The input side operates

from a single 2.25-V to 5.5-V supply. The output side

allows for a supply range from minimum 15 V to

maximum 30 V. Two complementary CMOS inputs

control the output state of the gate driver. The short

propagation time of 76 ns provides accurate control

of the output stage.

An internal desaturation (DESAT) fault detection

recognizes when the IGBT is in an overcurrent

condition. Upon a DESAT detect, a mute logic

immediately blocks the output of the isolator and

initiates a soft-turnoff procedure which disables the

OUTH pin and pulls the OUTL pin to low over a time

span of 2 μs. When the OUTL pin reaches 2 V with

respect to the most-negative supply potential, VEE2,

the gate-driver output is pulled hard to the VEE2

potential, turning the IGBT immediately off.

Device Information(1)

PART NUMBER

PACKAGE

BODY SIZE (NOM)

ISO5852S-Q1

SOIC (16)

10.30 mm × 7.50 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Functional Block Diagram