4

LM5109A

SNVS412C – APRIL 2006 – REVISED SEPTEMBER 2016

www.ti.com

Product Folder Links: LM5109A

Submit Documentation Feedback

Copyright © 2006–2016, Texas Instruments Incorporated

(1)

The human body model is a 100 pF capacitor discharged through a 1.5k

Ω resistor into each pin.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM) (1)

±1500

V

(1)

In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally

not exceed –1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated

voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD – 15V. For example, if

VDD = 10V, the negative transients at HS must not exceed –5V.

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

VDD

8

14

V

HS(1)

−1

90

V

HB

VHS + 8

VHS + 14

V

HS Slew Rate

< 50

V/ns

Junction Temperature

−40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

LM5109A

UNIT

D (SOIC)

NGT (WSON)

8 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

117.6

42.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

64.9

34

°C/W

RθJB

Junction-to-board thermal resistance

58.1

19.3

°C/W

ψJT

Junction-to-top characterization parameter

17.4

0.4

°C/W

ψJB

Junction-to-board characterization parameter

57.6

19.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

–

8.1

°C/W

(1)

Minimum and maximum limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through

correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).

6.5 Electrical Characteristics

Unless otherwise specified, VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO

(1). Typical limits are for T

J = 25°C, and

minimum and maximum limits apply over the operating junction temperature range (–40°C to 125°C).

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY CURRENTS

IDD

VDD quiescent current

LI = HI = 0V

0.3

0.6

mA

IDDO

VDD operating current

f = 500 kHz

1.8

2.9

mA

IHB

Total HB quiescent current

LI = HI = 0V

0.06

0.2

mA

IHBO

Total HB operating current

f = 500 kHz

1.4

2.8

mA

IHBS

HB to VSS current, quiescent

VHS = VHB = 90V

0.1

10

µA

IHBSO

HB to VSS current, operating

f = 500 kHz

0.5

mA

INPUT PINS LI and HI

VIL

Low-level input voltage threshold

0.8

1.8

V

VIH

High-level input voltage threshold

1.8

2.2

V

RI

Input pulldown resistance

100

200

500

k

Ω

UNDER-VOLTAGE PROTECTION

VDDR

VDD rising threshold

VDDR = VDD – VSS

6.0

6.7

7.4

V

VDDH

VDD threshold hysteresis

0.5

V

VHBR

HB rising threshold

VHBR = VHB – VHS

5.7

6.6

7.1

V