LM5109

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

LM5109A

SNVS412C – APRIL 2006 – REVISED SEPTEMBER 2016

LM5109A High Voltage 1A Peak Half Bridge Gate Driver

1

1 Features

1

•

Drives Both a High-Side and Low-Side N-Channel

MOSFET

•

1A peak Output Current (1.0A Sink / 1.0A Source)

•

Independent TTL Compatible Inputs

•

Bootstrap Supply Voltage to 108V DC

•

Fast Propagation Times (30 ns Typical)

•

Drives 1000 pF Load with 15ns Rise and Fall

Times

•

Excellent Propagation Delay Matching (2 ns

Typical)

•

Supply Rail Under-Voltage Lockout

•

Low Power Consumption

•

Pin Compatible with ISL6700

•

Industry Standard SOIC-8 and Thermally

Enhanced WSON-8 Package

2 Applications

•

Current Fed Push-Pull Converters

•

Half and Full Bridge Power Converters

•

Solid State Motor Drives

•

Two Switch Forward Power Converters

3 Description

The LM5109A is a cost effective, high voltage gate

driver designed to drive both the high-side and the

low-side N-Channel MOSFETs in a synchronous

buck or a half bridge configuration. The floating high-

side driver is capable of working with rail voltages up

to 90V. The outputs are independently controlled with

TTL compatible input thresholds. The robust level

shift

technology

operates

at

high

speed

while

consuming low power and providing clean level

transitions from the control input logic to the high-side

gate driver. Under-voltage lockout is provided on both

the low-side and the high-side power rails. The

device is available in the SOIC and the thermally

enhanced WSON packages.

Device Information(1)

PART NUMBER

PACKAGE

BODY SIZE (NOM)

LM5109A

SOIC (8)

4.90 mm × 3.91 mm

WSON (8)

4.00 mm × 4.00 mm

(1) For all available packages, see the orderable addendum at

the end of the datasheet.

Simplified Application Diagram