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ELECTRICAL CHARACTERISTICS: V

OPA211

OPA2211

SBOS377A – OCTOBER 2006 – REVISED FEBRUARY 2007

BOLDFACE limits apply over the specified temperature range, T

At T

Standard Grade

High Grade

OPA211A, OPA2211A

PARAMETER

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

OFFSET VOLTAGE

Input Offset Voltage

±15V

±20

±100

±20

TBD

µV

Drift

0.35

1

0.35

µV/°C

vs Power Supply

PSRR

2

TBD

µV/V

INPUT BIAS CURRENT

Input Bias Current

30

150

30

TBD

nA

Over Temperature

TBD

TBD

TBD

TBD

nA

Offset Current

10

100

10

TBD

nA

Over Temperature

TBD

TBD

TBD

TBD

nA

NOISE

Input Voltage Noise:

f = 0.1Hz to 10Hz

0.1

0.1

µV

PP

Voltage Noise Density:

f = 10Hz

2.5

2.5

nV/

√Hz

f = 100Hz

1.6

1.6

nV/

√Hz

f = 1kHz

1.1

1.1

nV/

√Hz

Input Current Noise Density:

f = 10Hz

TBD

TBD

pA/

√Hz

f = 1kHz

1.5

1.5

pA/

√Hz

INPUT VOLTAGE RANGE

Common-Mode Voltage

(V–)+1.8

(V+)–1.4

(V–)+1.8

(V+)–1.4

V

Range

Common-Mode Rejection

CMRR

114

120

114

120

dB

Ratio

INPUT IMPEDANCE

Differential

Ω || pF

Common-Mode

Ω || pF

OPEN-LOOP GAIN

Open-Loop Voltage Gain

114

120

114

120

dB

110

114

114

dB

Over Temperature

110

114

110

114

dB

FREQUENCY RESPONSE

Gain-Bandwidth Product

GBW

G = 100

80

80

MHz

G = 1

58

58

MHz

Slew Rate

SR

27

27

V/

µs

Settling Time, 0.01%

TBD

TBD

µs

0.0015% (16-bit)

TBD

TBD

µs

Overload Recovery Time

G = –1

< 1

< 1

µs

Total Harmonic Distortion +

G = +10, f = 20kHz,

THD+N

TBD

TBD

%

Noise

(1)

Shaded cells indicate different specifications from low-grade version of device.

4

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