3

1997 Fairchild Semiconductor Corporation

NPN General Purpose Amplifier

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

BCP54

This device is designed for general purpose medium power

amplifiers and switching circuits requiring collector currents

to 1.2 A. Sourced from Process 38.

Symbol

Parameter

Value

Units

VCEO

Collector-Emitter Voltage

45

V

VCBO

Collector-Base Voltage

45

V

VEBO

Emitter-Base Voltage

5.0

V

IC

Collector Current - Continuous

1.5

A

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

°C

B

C

C

SOT-223

E

Symbol

Characteristic

Max

Units

BCP54

PD

Total Device Dissipation

Derate above 25

°C

1.5

12

W

mW/

°C

RθJA

Thermal Resistance, Junction to Ambient

83.3

°C/W