BCP54 datasheet(3/9 Pages) ONSEMI

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Typical Characteristics

Electrical Characteristics

TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min

Max

Units

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC = 10 mA, IB = 045V

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 100

µA, I

E = 0

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10

µA, I

C = 0

5.0

ICBO

Collector-Cutoff Current

VCB = 30 V, IE = 0

VCB = 30 V, IE = 0, TA = 125

°C

100

µA

IEBO

Emitter-Cutoff Current

VEB = 5.0 V, IC = 0

µA

ON CHARACTERISTICS

hFE

DC Current Gain

IC = 5.0 mA, VCE = 2.0 V

IC = 150 mA, VCE = 2.0 V

IC = 500 mA, VCE = 2.0 V

250

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 500 mA, IB = 50 mA

0.5

VBE(on)

Base-Emitter On Voltage

IC = 500 mA, VCE = 2.0 V

1.0

Typical Pulsed Current Gain

vs Collector Current

0.001

0.01

0.1

100

200

300

400

500

- COLLECTOR CURRENT (A)

- 40 °C

25 °C

= 5V

125 °C

Collector- Emitter Saturation

Voltage vs Collect or Current

0.01

0.1

0.2

0.3

0.4

0.5

0.6

- COLLE CTOR CURRENT (A)

β = 10

125 °C

- 40 °C

25°C

NPN General Purpose Amplifier

(continued)

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