FDS6930A. datasheet(2/7 Pages) ONSEMI

2 / 7 page

October 1998

FDS6930A

Dual N-Channel, Logic Level, PowerTrench

TM MOSFET

General Description

Features

Absolute Maximum Ratings

A = 25

oC unless otherwise noted

Symbol

Parameter

FDS6930A

Units

DSS

Drain-Source Voltage

GSS

Gate-Source Voltage

±20

Drain Current - Continuous

(Note 1a)

5.5

- Pulsed

Power Dissipation for Dual Operation

(Note 1)

Power Dissipation for Single Operation

(Note 1a)

1.6

(Note 1b)

(Note 1c)

0.9

J,TSTG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

RθJA

Thermal Resistance, Junction-to-Ambient (Note 1a)

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

°C/W

FDS6930A Rev.D

5.5 A, 30 V. R

DS(ON) = 0.040 Ω

@ V

GS = 10 V

DS(ON) = 0.055 Ω

@ V

GS = 4.5 V.

Fast switching speed.

Low gate charge (typical 5 nC).

High performance trench technology for extremely low

DS(ON).

High power and current handling capability.

SOT-23

SuperSOT

TM-8

SOIC-16

SO-8

SOT-223

SuperSOT

TM-6

These N-Channel

Logic

Level MOSFETs are

produced

using

Fairchild

Semiconductor's

advanced PowerTrench process that has been

especially tailored to minimize the on-state

resistance and yet maintain superior switching

performance.

These devices are well suited for low voltage and

battery powered applications

where low in-line

power loss and fast switching are required.

SO-8

FDS

6930A

pin 1

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