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FDS6930A. Datasheet(PDF) 3 Page - ON Semiconductor

Part # FDS6930A.
Description  Dual N-Channel, Logic Level, PowerTrenchTM MOSFET
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDS6930A. Datasheet(HTML) 3 Page - ON Semiconductor

  FDS6930A. Datasheet HTML 1Page - ON Semiconductor FDS6930A. Datasheet HTML 2Page - ON Semiconductor FDS6930A. Datasheet HTML 3Page - ON Semiconductor FDS6930A. Datasheet HTML 4Page - ON Semiconductor FDS6930A. Datasheet HTML 5Page - ON Semiconductor FDS6930A. Datasheet HTML 6Page - ON Semiconductor FDS6930A. Datasheet HTML 7Page - ON Semiconductor  
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Electrical Characteristics
(T
A = 25
OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS = 0 V, I D = 250 µA
30
V
∆BV
DSS/∆TJ
Breakdown Voltage Temp. Coefficient
I
D = 250 µA, Referenced to 25
oC
20
mV/
oC
I
DSS
Zero Gate Voltage Drain Current
V
DS = 24 V, VGS = 0 V
1
µA
T
J = 55°C
10
µA
I
GSSF
Gate - Body Leakage, Forward
V
GS = 20 V, VDS = 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS = -20 V, VDS = 0 V
-100
nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS = VGS, ID = 250 µA
1
1.5
3
V
∆V
GS(th)/∆TJ
Gate Threshold Voltage Temp. Coefficient
I
D = 250 µA, Referenced to 25
oC
-4
mV/
oC
R
DS(ON)
Static Drain-Source On-Resistance
V
GS = 10 V, ID = 5.5 A
0.032
0.04
Ω
T
J =125°C
0.048
0.068
V
GS = 4.5 V, ID = 4.8 A
0.044
0.055
I
D(ON)
On-State Drain Current
V
GS = 10 V, VDS = 5 V
20
A
g
FS
Forward Transconductance
V
DS = 15 V, ID = 5.5 A
12
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS = 15 V, VGS = 0 V,
f = 1.0 MHz
460
pF
C
oss
Output Capacitance
115
pF
C
rss
Reverse Transfer Capacitance
45
pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time
V
DS = 15 V, ID = 1 A
5
11
ns
t
r
Turn - On Rise Time
V
GS = 10 V , RGEN = 6 Ω
8
17
ns
t
D(off)
Turn - Off Delay Time
17
28
ns
t
f
Turn - Off Fall Time
13
24
ns
Q
g
Total Gate Charge
V
DS = 5 V, ID = 5.5 A,
5
7
nC
Q
gs
Gate-Source Charge
V
GS = 5 V
2
nC
Q
gd
Gate-Drain Charge
0.9
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
1.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS = 0 V, IS = 1.3 A
(Note 2)
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDS6930A Rev.D
c. 135
OC/W on a 0.003 in2
pad of 2oz copper.
b. 125
OC/W on a 0.02 in2
pad of 2oz copper.
a. 78
OC/W on a 0.5 in2
pad of 2oz copper.



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