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L9924L Datasheet(PDF) 23 Page - STMicroelectronics |
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L9924L Datasheet(HTML) 23 Page - STMicroelectronics |
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23 / 84 page ![]() DocID028840 Rev 3 23/84 L9924L Electrical specifications 83 15 Ibus_PAS_do m Input leakage current at the receiver with pull-up resistor V(A+/B+) =12 V [0x08].4 = LIN_PU_DIS = b0 V(TxD) = VTXDHIGH V(LIN/BSS) = V(GND) -1 - - mA 16 Ibus_PAS_No PU_dom Input leakage current at the receiver w/o pull-up resistor V(A+/B+) =12 V [0x08].4 = LIN_PU_DIS = b1 V(TxD) = VTXDHIGH V(LIN/BSS) = V(GND) -0.85 - - mA 17 Ibus_PAS_rec Transmitter input current in recessive state V(TxD) = VTXDHIGH V(LIN/BSS) > 8 V V(A+/B+) < 33 V V(A+/B+)≤V(LIN/BSS)<V(A+/ B+)+0.3 - - 20 µA 18 Ibus_NO_GND Input current in case of device GND loss V(A+/B+)=V(GND) = 12 V 0 V < V(LIN/BSS) < 33 V 0- 2 mA 19 Ibus Input current in case of device A+/B+ loss V(A+/B+) = V(GND) 0 V < V(LIN/BSS) < 33 V -- 3.5 mA LIN/BSS transmitter 20 VLINdom LIN/BSS bus voltage level in dominant state V(TxD)=VTXDLOW I(LIN/BSS) = 40 mA - - 1.35 V 21 VLINrec LIN/BSS bus voltage level in recessive state V(A+/B+) =12 V V(TxD) = VTXDHIGH I(LIN/BSS) = -10 µA 0.8 V(A+/B+) -- V 22 RLINup LIN/BSS bus pull up resistor V(LIN/BSS) = V(GND) 20 40 60 k LIN/BSS timing 23 SRf LIN/BSS bus slew rate falling edge V(A+/B+)=12V From 20% to 80% of V(LIN/BSS) (Rbus,Cbus) = (1 kΩ, 1 nF) 12 3 V/µs 24 tRXpd LIN/BSS-to-RxD receiver tRXDpdf=t[0,5*V(RxD)] - t[0,45*V(LIN/BSS)] tRXDpdr=t[0,5*V(RxD)]- t[0,55*V(LIN/BSS)] tRXDpd=max(tRXDpdr, tRXDpdf) CRXD = 20 pF V(A+/B+) = 12 V (Rbus,Cbus) = (1 kΩ,1 nF), (660 Ω,6.8 nF), (500 Ω,10nF) -- 6 µs 25 tRXDpd_sym tRXDpd symmetry (tRXDpdr Vs. tRXDpdf) tRXpd_sym = tRXpdr – tRXpdf -4 - 4 µs Table 13. Electrical characteristics pin "LIN/BSS" (continued) # Symbol Parameter Test condition Min. Typ. Max. Unit |
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