4

INA333

SBOS445C – JULY 2008 – REVISED DECEMBER 2015

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Copyright © 2008–2015, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Input pins are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be

current limited to 10 mA or less.

(3)

Short-circuit to ground.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

7

V

Analog input voltage(2)

(V–) – 0.3

(V+) + 0.3

V

Output short-circuit(3)

Continuous

Operating temperature, TA

–40

150

°C

Junction temperature, TJ

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD) Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±4000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

Machine model (MM)

±200

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VS

Supply voltage

1.8

5.5

V

Specified temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information

THERMAL METRIC(1)

INA333

UNIT

DGK (VSSOP)

DRG (WSON)

8 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

169.5

60

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

62.7

60

°C/W

RθJB

Junction-to-board thermal resistance

90.3

50

°C/W

ψJT

Junction-to-top characterization parameter

7.6

—

°C/W

ψJB

Junction-to-board characterization parameter

88.7

—

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

—

6

°C/W