INA186 datasheet(5/45 Pages) TI2

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6.5 Electrical Characteristics

at TA = 25°C, VSENSE = VIN+ – VIN–, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, and VENABLE = VS (unless otherwise

noted)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

CMRR

Common-mode rejection ratio

VSENSE = 0 mV, VIN+ = –0.1 V to 40 V, TA = –40°C to +125°C

120

150

VOS

Offset voltage, RTI(1)

VS = 1.8 V, VSENSE = 0 mV

–3

±50

µV

dVOS/dT Offset drift, RTI

VSENSE = 0 mV, TA = –40°C to +125°C

0.05

0.5

µV/°C

PSRR

Power-supply rejection ratio,

RTI

VSENSE = 0 mV, VS = 1.7 V to 5.5 V

–1

±10

µV/V

IIB

Input bias current

VSENSE = 0 mV

0.5

IIO

Input offset current

VSENSE = 0 mV

±0.07

OUTPUT

Gain

A1 devices

V/V

A2 devices

A3 devices

100

A4 devices

200

A5 devices

500

Gain error

VOUT = 0.1 V to VS – 0.1 V

–0.04%

±1%

Gain error drift

TA = –40°C to +125°C

10 ppm/°C

Nonlinearity error

VOUT = 0.1 V to VS – 0.1 V

±0.01%

RVRR

Reference voltage rejection

ratio

VREF = 100 mV to VS – 100 mV,

TA = –40°C to +125°C

±2

±10

µV/V

Maximum capacitive load

No sustained oscillation

VOLTAGE OUTPUT

VSP

Swing to VS power-supply rail

VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C

(VS) – 20

(VS) – 40

VSN

Swing to GND

VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C,

VSENSE = –10 mV, VREF = 0 V

(VGND) + 0.05

(VGND) + 1

VZL

Zero current output voltage

VS = 1.8 V, RL = 10 kΩ to GND,

TA = –40°C to +125°C, VSENSE = 0 mV, VREF = 0 V

(VGND) + 2

(VGND) + 10

FREQUENCY RESPONSE

Bandwidth

A1 devices, CLOAD = 10 pF

kHz

A2 devices, CLOAD = 10 pF

A3 devices, CLOAD = 10 pF

A4 devices, CLOAD = 10 pF

A5 devices, CLOAD = 10 pF

Slew rate

VS = 5.0 V, VOUT = 0.5 V to 4.5 V

0.3

V/µs

Settling time

From current step to within 1% of final value

µs

NOISE, RTI(1)

Voltage noise density

nV/√Hz

ENABLE

IEN

Leakage input current

0 V ≤ VENABLE ≤ VS

100

VIH

High-level input voltage

DDF Package

0.7 × VS

VIL

Low-level input voltage

0.3 × VS

VHYS

Hysteresis

300

VIH

High-level input voltage

YFD package

1.35

5.5

VIL

Low-level input voltage

0.4

VHYS

Hysteresis

100

IODIS

Output leakage disabled

VS = 5.0 V, VOUT = 0 V to 5.0 V, VENABLE = 0 V

µA

POWER SUPPLY

Quiescent current

VS = 1.8 V, VSENSE = 0 mV

µA

VS = 1.8 V, VSENSE = 0 mV, TA = –40°C to +125°C

µA

www.ti.com

INA186

SBOS318B – APRIL 2019 – REVISED JULY 2021

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