TMDS181RGZRG4 datasheet(8/60 Pages) TI2

8 / 60 page

TMDS181, TMDS181I

SLASE75D – AUGUST 2015 – REVISED SEPTEMBER 2017

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Product Folder Links: TMDS181

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(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2)

Test conditions for ΨJB and ΨJT are clarified in the Semiconductor and IC Package Thermal Metrics.

6.4 Thermal Information

THERMAL METRIC(1)(2)

TMDS181x

UNIT

RGZ (VQFN)

48 PINS

RθJA

Junction-to-ambient thermal resistance

31.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

18.2

°C/W

RθJB

Junction-to-board thermal resistance

8.1

°C/W

ψJT

Junction-to-top characterization parameter

0.4

°C/W

ψJB

Junction-to-board characterization parameter

8.1

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

3.2

°C/W

(1)

The typical rating is simulated at 3.3 V VCC and 1.2 V VDD and at 27°C temperature unless otherwise noted

(2)

The maximum rating is simulated at 3.465 V VCC and 1.27 V VDD and at 85°C temperature unless otherwise noted

(3)

ICC is a direct result of the source design as the TMDS181x integrated receive termination resistor accounts for 85 to 110 mA.

(4)

IDD is impacted by ARC usage. Connecting a 500 kΩ resistor to GND at SPDIF reduces the value by more than 20 mA

(5)

The measurements were made with no active source connected.

6.5 Power Supply Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP(1)

MAX(2)

UNIT

PD1

(3) (4)

Device power dissipation

(retimer operation)

OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

IN_Dx: VID_PP = 1200 mV, 6 Gbps TMDS pattern, VI = 3.3 V,

I2C_EN/PIN = L, PRE_SEL= NC, EQ_SEL= NC,

SDA_CTL/CLK_CTL = 0 V

800

900

PD2

(3) (4)

Device power dissipation

(redriver operation)

OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

IN_Dx: VID_PP = 1200 mV, 2.97 Gbps TMDS pattern, VI = 3.3 V,

I2C_EN/PIN = L, PRE_SEL= NC, EQ_SEL= H,

SDA_CTL/CLK_CTL = 0 V

500

600

PSD1

(3) (4) (5)

Device power in standby

OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V, HPD = H, No

valid input signal

100

PSD2

(3) (4) (5)

Device power in power down

OE = L, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

ICC1

(3) (4)

VCC supply current (TMDS

6Gpbs retimer mode)

OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

IN_Dx: VID_PP = 1200 mV, 6 Gbps TMDS pattern

I2C_EN/PIN = L, PRE_SEL = NC, EQ_CTL = NC,

SDA_CTL/CLK_CTL = 0 V

131

150

IDD1

(3) (4)

VDD supply current (TMDS

6Gpbs retimer mode)

OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

IN_Dx: VID_PP = 1200 mV, 6 Gbps TMDS pattern

I2C_EN/PIN = L, PRE_SEL = NC, EQ_CTL = NC,

SDA_CTL/CLK_CTL = 0 V

332

350

ICC2

(3) (4)

VCC supply current (TMDS

6Gpbs redriver mode)

OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

IN_Dx: VID_PP = 1200 mV, 2.97 Gbps TMDS pattern

I2C_EN/PIN = L, PRE_SEL = NC, EQ_CTL = H,

SDA_CTL/CLK_CTL = 0 V

IDD2

(3) (4)

VDD supply current (TMDS

6Gpbs redriver mode)

OE = H, VCC= 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

IN_Dx: VID_PP = 1200 mV, 3.4 Gbps TMDS pattern

I2C_EN/PIN = L, PRE_SEL = NC, EQ_CTL = H,

SDA_CTL/CLK_CTL = 0 V

187

ISD1

(5)

Standby current

OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2

V/1.27 V, HPD = H: No valid signal on

IN_CLK

3.3 V rail(3)

1.2 V rail

ISD2

(5)

Power-down current

OE = L, VCC = 3.3 V/3.465 V, VDD = 1.2

V/1.27 V

3.3 V rail(3)

1.2 V rail

3.5

TMDS181RGZRG4 Datasheet(PDF) 8 Page - Texas Instruments

TMDS181RGZRG4 Datasheet(HTML) 8 Page - Texas Instruments

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