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RM3272D Datasheet(PDF) 3 Page - Shaanxi Reactor Microelectronics Co., Ltd. |
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RM3272D Datasheet(HTML) 3 Page - Shaanxi Reactor Microelectronics Co., Ltd. |
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3 / 8 page  高效率高精度，PSR 充电器驱动芯片 RM3272D 规格书 RM3272D_Rev.1.0 www.reactor-micro.com - 3- 陕西亚成微电子股份有限公司 管脚说明： 管脚序号 管脚名称 管脚描述 1 VDD 电源输入 2 COMP 恒压模式下环路补偿端 3 INV 辅助绕组电压反馈端， 通过分压电阻连接到反馈绕组上 4 CS 电流检测输入 5/6 DRAIN MOSFET 漏极 7/8 GND 地 极限参数： 参数 数值 漏极电压 -0.3V to BVdss VDD 输入电压 -0.3V to Vdd_clamp VDD 箝位流入最大电流 10mA COMP 输入电压 -0.3V to 7V CS 输入电压 -0.3V to 7V INV 输入电压 -0.3V to 7V 最大结点工作温度 Tj 150℃ 存储温度范围 -55 to 150℃ 焊接温度 260℃/10S 结构框图： |
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