Publication Order Number:

PN200A/D

© 1997

Semiconductor Components Industries, LLC.

October-2017, Rev. 2

PN200A / MMBT200

PNP General-Purpose Amplifier

Ordering Information

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-

duty cycle operations.

Figure 1. PN200A Device Package

Figure 2. MMBT200 Device Package

Part Number

Marking

Package

Packing Method

PN200A

PN200A

TO-92 3L

Bulk

MMBT200

N2

SOT-23 3L

Tape and Reel

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter Voltage

-45

V

VCBO

Collector-Base Voltage

-60

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current - Continuous

-500

mA

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

EB C

TO-92

C

B

E

SOT-23

Description

This device is designed for general-purpose amplifier

applications at collector currents to 300 mA. Sourced

from Process 68.