5.5 Thermal Information

THERMAL METRIC (1)

TSD03

TSD05

TSD12 / TSD15 / TSD18 /

TSD24 / TSD36

UNIT

DYF (SOD-323) DYF (SOD-323)

DYF (SOD-323)

2 PINS

2 PINS

2 PINS

RθJA

Junction-to-ambient thermal resistance

739.2

672.0

693.9

°C/W

RθJC(top) Junction-to-case (top) thermal resistance

287.7

230.5

254.7

°C/W

RθJB

Junction-to-board thermal resistance

605.5

541.4

566.6

°C/W

ΨJT

Junction-to-top characterization parameter

118.4

64.4

78.6

°C/W

ΨJB

Junction-to-board characterization parameter

591.1

527.5

552.3

°C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance

N/A

N/A

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

5.6 Electrical Characteristics - TSD03

At TA = 25°C unless otherwise noted (1)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off

voltage

IIO < 50nA, across operating temperature range

3.6

V

VBR

Breakdown voltage

IIO = 1mA, IO to GND

4.5

V

ILEAK

Reverse leakage

current

VIO = 3.6V, IO to GND

5

50

nA

VFWD

Forward voltage

IIO = 1mA, GND to IO

0.8

V

VCLAMP

Surge clamping voltage,

tp = 8/20µs (2)

IPP = 12A, IO to GND

6.3

V

IPP = 25A, IO to GND

7.7

V

IPP = 12A, GND to IO

3

V

IPP = 25A, GND to IO

4.9

V

TLP clamping voltage,

tp = 100ns

IPP = 16A, IO to GND

6.5

V

IPP = 16A, GND to IO

3.4

V

CL

Line capacitance

VIO = 0V, Vp-p = 30mV, f = 1MHz, IO to GND

4.5

pF

(1)

Typical parameters are measured at 25°C

(2)

Nonrepetitive current pulse 8 to 20μs exponentially decaying waveform according to IEC 61000-4-5

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TSD03, TSD05, TSD12, TSD15, TSD18, TSD24, TSD36

SLVSH43C – JULY 2023 – REVISED MAY 2025

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