5.9 Electrical Characteristics - TSD15

At TA=25℃ (unless otherwise noted) (1)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off

voltage

IIO <50nA, across operating temperature range

15

V

VBR

Breakdown voltage

IIO = 10mA, IO to GND

18.3

V

ILEAK

Reverse leakage

current

VIO = 15V, IO to GND

2

20

nA

VFWD

Forward voltage

IIO = 10mA, GND to IO

0.7

V

VCLAMP

Surge clamping voltage,

tp = 8/20µs (2)

IPP = 1A, IO to GND

25

V

IPP = 5A, IO to GND

26

V

IPP = 15A, IO to GND

31

V

IPP = 15A, GND to IO

7

V

TLP clamping

voltage, tp = 100ns

IPP = 16A, IO to GND

23

V

IPP =16A, GND to IO

3

V

CL

Line capacitance

VIO = 0V; ƒ = 1MHz, IO to GND

12

pF

(1)

Typical parameters are measured at 25°C

(2)

Nonrepetitive current pulse 8 to 20µs exponentially decaying waveform according to IEC 61000-4-5

5.10 Electrical Characteristics - TSD18

At TA=25℃ (unless otherwise noted) (1)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off

voltage

IIO <50nA, across operating temperature range

18

V

VBR

Breakdown voltage

IIO = 10mA, IO to GND

18.5

V

ILEAK

Reverse leakage

current

VIO = 18V, IO to GND

2

20

nA

VFWD

Forward voltage

IIO = 10mA, GND to IO

0.7

V

VCLAMP

Surge clamping voltage,

tp = 8/20µs (2)

IPP = 1A, IO to GND

25

V

IPP = 5A, IO to GND

26

V

IPP = 15A, IO to GND

31

V

IPP = 15A, GND to IO

7

V

TLP clamping

voltage, tp = 100ns

IPP = 16A, IO to GND

23

V

IPP =16A, GND to IO

3

V

CL

Line capacitance

VIO = 0V; ƒ = 1MHz, IO to GND

12

pF

(1)

Typical parameters are measured at 25°C

(2)

Nonrepetitive current pulse 8 to 20µs exponentially decaying waveform according to IEC 61000-4-5

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TSD03, TSD05, TSD12, TSD15, TSD18, TSD24, TSD36

SLVSH43C – JULY 2023 – REVISED MAY 2025

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