5.11 Electrical Characteristics - TSD24

At TA=25℃ (unless otherwise noted) (1)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off

voltage

IIO <50nA, across operating temperature range

24

V

VBR

Breakdown voltage

IIO = 10mA, IO to GND

24.8

V

ILEAK

Reverse leakage

current

VIO = 24V, IO to GND

2

20

nA

VFWD

Forward voltage

IIO = 10mA, GND to IO

0.7

V

VCLAMP

Surge clamping voltage,

tp = 8/20µs (2)

IPP = 1A, IO to GND

32

V

IPP = 5A, IO to GND

36

V

IPP = 9A, IO to GND

39

V

IPP = 9A, GND to IO

4

V

TLP clamping

voltage, tp = 100ns

IPP = 16A, IO to GND

33

V

IPP =16A, GND to IO

3

V

CL

Line capacitance

VIO = 0V; ƒ = 1MHz, IO to GND

12

pF

(1)

Typical parameters are measured at 25°C

(2)

Nonrepetitive current pulse 8 to 20µs exponentially decaying waveform according to IEC 61000-4-5

5.12 Electrical Characteristics - TSD36

At TA=25℃ (unless otherwise noted) (1)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off

voltage

IIO <50nA, across operating temperature range

36

V

VBR

Breakdown voltage

IIO = 10mA, IO to GND

37.1

V

ILEAK

Reverse leakage

current

VIO = 36V, IO to GND

2

20

nA

VFWD

Forward voltage

IIO = 10mA, GND to IO

0.7

V

VCLAMP

Surge clamping voltage,

tp = 8/20µs (2)

IPP = 1A, IO to GND

44

V

IPP = 5A, IO to GND

59

V

IPP = 7A, IO to GND

67

V

IPP = 7A, GND to IO

4

V

TLP clamping

voltage, tp = 100ns

IPP = 16A, IO to GND

53

V

IPP =16A, GND to IO

3

V

CL

Line capacitance

VIO = 0V; ƒ = 1MHz, IO to GND

12

pF

(1)

Typical parameters are measured at 25°C

(2)

Nonrepetitive current pulse 8 to 20µs exponentially decaying waveform according to IEC 61000-4-5

TSD03, TSD05, TSD12, TSD15, TSD18, TSD24, TSD36

SLVSH43C – JULY 2023 – REVISED MAY 2025

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