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30.0-46.0 GHz GaAs MMIC

Receiver

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2007 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

August 2007 - Rev 16-Aug-07

R1004-BD

App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1, Vd2 and Vd3 with

Vd(1,2,3)=4.0V, Id1=Id2=25mA and Id3=145mA. Additionally, a mixer and doubler bias are also required with Vg4=Vg5=-0.5V. Adjusting Vg4

and Vg5 above or below this value can adversely affect conversion gain, image rejection and intercept point performance. It is also

recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible

results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low

power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is

controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is

protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is

available before applying the positive drain supply.

App Note [2] Bias Arrangement -

For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass

capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if

gate or drains are tied together) of DC bias pads.

For Individual Stage Bias -- Each DC pad (Vd1,2,3 and Vg1,2,3,4,5) needs to have DC bypass capacitance (~100-200 pF) as close to the device

as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.

Typical Application

Mimix Broadband's 30.0-46.0 GHz XR1004-BD GaAs MMIC Receiver can be used in saturated radio applications and linear modulation

schemes up to 128 QAM. The receiver can be used in upper and lower sideband applications from 30.0-46.0 GHz.

IR Mixer

LNA

Mimix Broadband MMIC-based 30.0-46.0 GHz Receiver Block Diagram

(Changing LO and IF frequencies as required allows design to operate as high as 46 GHz)

RF IN

37.0-39.5 GHz

XR1004-BD

BPF

Coupler

IF Out

2 GHz

LO(+2.0dBm)

17.5-18.75 GHz (USB Operation)

19.5-20.75 GHz (LSB Operation)

AGC Control

Buffer

X2

MTTFTable (TBD)

Backplate

Temperature

55 deg Celsius

75 deg Celsius

95 deg Celsius

Channel

Temperature

deg Celsius

deg Celsius

deg Celsius

FITs

E+

E+

E+

MTTF Hours

E+

E+

E+

Rth

C/W

C/W

C/W

Bias Conditions: Vd1=Vd2=Vd3=4.0V, Id1=Id2=25 mA, Id3=145 mA

These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.