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TH8055 Datasheet(PDF) 7 Page - Melexis Microelectronic Systems

Part # TH8055
Description  Single Wire CAN Transceiver
PDF  20 Pages
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Manufacturer  MELEXIS [Melexis Microelectronic Systems]
Direct Link  http://www.melexis.com
Logo MELEXIS - Melexis Microelectronic Systems

TH8055 Datasheet(HTML) 7 Page - Melexis Microelectronic Systems

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TH8055
Single Wire CAN Transceiver
3. Electrical Specification
All voltages are referenced to ground (GND). Positive currents flow into the IC. The absolute maximum
ratings given in the table below are limiting values that do not lead to a permanent damage of the device but
exceeding any of these limits may do so. Long term exposure to limiting values may affect the reliability of
the device. Reliable operation of the TH8055 is only specified within the limits shown in ”Operating
conditions”.
3.1
Operating Conditions
Parameter
Symbol
Min
Max
Unit
Battery voltage
VBAT
5.0
18
V
Operating ambient temperature
TA
-40
125
°C
Junction temperature
TJ
-40
150
°C
3.2
Absolute Maximum Ratings
Parameter
Symbol
Condition
Min
Max
Unit
Supply voltage
VBAT
-0.3
18
V
Load dump; t<500ms
40
Short-term supply voltage
VBAT.LD
Jump start; t<1 min
27
V
Transient supply voltage
VBAT.TR1
ISO 7637/1 pulse 1 [1]
-50
V
Transient supply voltage
VBAT.TR2
ISO 7637/1 pulses 2 [1]
100
V
Transient supply voltage
VBAT.TR3
ISO 7637/1 pulses 3A, 3B
-200
200
V
VBAT<= 27V
-20
CANH voltage
VCANH
VBAT = 0V
-40
40
V
Transient bus voltage
VCANHTR1
ISO 7637/1 pulse 1 [2]
-50
V
Transient bus voltage
VCANHTR2
ISO 7637/1 pulses 2 [2]
100
V
Transient bus voltage
VCANHTR3
ISO 7637/1 pulses 3A, 3B [2]
-200
200
V
DC voltage on pin LOAD
VLOAD
via RT > 2k
Ω
-40
40
V
DC voltage on pins TxD,MODE1,MODE0,RxD
VDC
-0.3
7
V
ESD capability of CANH
VESDBUS
Human body model
Eq. to discharge 100pF with
1.5k
Ω
-4000
4000
V
ESD capability of any other pins
VESD
Human body model
Eq. to discharge 100pF with
1.5k
Ω
-2000
2000
V
Maximum latch-up free current at any Pin
ILATCH
-500
500
mA
Maximum power dissipation
Ptot
At TA = 125 °C
197 [3]
mW
Thermal impedance
ΘJA
in free air
152
K/W
Storage temperature
TSTG
-55
150
°C
Junction temperature
TJ
-40
150
°C
[1] ISO 7637 test pulses are applied to VBAT via a reverse polarity diode and >1uF blocking capacitor .
[2] ISO 7637 test pulses are applied to CANH via a coupling capacitance of 1 nF.
[3] The application board shall be realized with a ground copper foil area > 200mm2 .
TH8055 - Datasheet
Page 7 of 20
3901008055
May 2004
Rev 005



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