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AFE10004RGETEP Datasheet(PDF) 1 Page - Texas Instruments |
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AFE10004RGETEP Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 159 page  AFE10004-EP 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches 1 Features • Specified for defense and aerospace applications • Controlled baseline • One assembly and test site • One fabrication site • Product traceability • Extended product life cycle • Local and remote diode temperature sensor – ±2.5°C error, maximum – 0.0625°C resolution • Internal EEPROM for autonomous operation – Storage for four independent transfer functions – Device configuration storage – Open space for user storage – Qualified for 15-year retention • Four analog outputs – Four monotonic DACs: 1.22mV resolution – Automatically configured output ranges: • Positive output voltage: 5.5V, maximum • Negative output voltage: –10V, minimum – High current drive capability: • Source up to 100mA • Sink up to 20mA – High capacitive load tolerant: up to 15µF • Gate bias on and off control switches – Two programmable off voltages • Two auxiliary DACs: 1.22mV resolution – Fast switching time: 50ns, typical – Low resistance: 3Ω, maximum • Built-in sequencing control • Internal 2.5V reference • SPI and I2C interfaces: 1.7V to 3.6V operation – SPI: 4-wire Interface – I2C: Eight selectable peripheral addresses • Specified temperature range: –55°C to +125°C 2 Applications • Radar • Electronic warfare • Communications payload • Defense radio 3 Description The AFE10004-EP is a highly integrated, autonomous, power-amplifier (PA) precision analog front end (AFE) that includes four temperature compensation digital-to-analog converters (DACs), integrated EEPROM, and gate bias switches. The four DACs are programmed by four independent, user- defined, temperature-to-voltage transfer functions stored in the internal EEPROM. This design allows correction any temperature effects to be corrected without additional external circuitry. After start-up, the device operates without intervention from a system controller to provide a complete system for setting and compensating bias voltages in control applications. The AFE10004-EP has four gate bias outputs that are switched on and off through dedicated control pins. The gate bias switches are designed for fast response. In combination with the device PA_ON pin, this fast response enables correct power sequencing and protection of depletion-mode transistors, such as GaAs and GaN. The function integration and wide operating temperature range make the AFE10004-EP an excellent choice as an all-in-one, autonomous bias control circuit for the power amplifiers found in RF systems. The flexible DAC output ranges and built- in sequencing features let the device be used as a biasing controller for a large variety of transistor technologies, such as LDMOS, GaAs, and GaN. Package Information PART NUMBER PACKAGE(1) PACKAGE SIZE(2) AFE10004-EP RGE (VQFN, 24) 4mm × 4mm (1) For more information, see Section 11. (2) The package size (length × width) is a nominal value and includes pins, where applicable. Time (Ps) -10 -5 0 5 10 15 20 25 30 35 40 -12 -10 -8 -6 -4 -2 0 2 4 amc7 DRVEN1 CLAMP1 (10PF) OUT1 (100nF) DAC1 (10PF) Gate Bias Switch Response AFE10004-EP SLASFM1A – JUNE 2025 – REVISED DECEMBER 2025 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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