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RF3220 Datasheet(PDF) 2 Page - RF Micro Devices

Part # RF3220
Description  HIGH LINEARITY/DRIVER AMPLIFIER
PDF  10 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF3220 Datasheet(HTML) 2 Page - RF Micro Devices

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RF3220
Rev A1 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20
dBm
Device Voltage
-0.5 to +6.0
V
Device Current
250
mA
Operating Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
VCC=5V, RFIN=-10dBm, Freq=1850MHz, with
Temp=25°C unless otherwise noted.
AC Specifications
Frequency
500
2000
MHz
Gain
12
14.2
15.5
dB
Input VSWR
1.2
1.5
SWR
Output VSWR
1.7
2.0
SWR
Reverse Isolation
20
23
Output IP3
36
40
dBm
F1= 1850MHz, F2=1851MHz
Output P1dB
23
+25.5
dBm
Noise Figure
2.9
3.3
dB
Thermal
ICC=160mA, PDISS=0.997W. (See Note.)
ThetaJC
76
°C/W
Maximum Measured Junction
Temperature at DC Bias Condi-
tions
153
°C
TCASE=+85°C
Mean Time To Failures
5800
years
TCASE=+85°C
DC Specifications
Device Voltage
4.5
5.0
5.5
V
ICC=160mA
Operating Current Range
110
145
170
mA
VCC=5V
Note: The RF3220 must be operated at or below 175mA in order to achieve the thermal performance listed above. While the RF3220 may be
operated at higher bias currents, 175mA is the recommended bias to ensure the highest possible reliability and electrical performance.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.



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