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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
VCC1
VCC2
GND
GND
GND1
RF IN
PD
G16
G8
RF OUT
GND
GND
RF OUT
NC
NC
RF2155
3V PROGRAMMABLE GAIN POWER
AMPLIFIER
The RF2155 is a 3V medium power programmable gain amplifier IC. The
device is manufactured on an advanced Gallium Arsenide Heterojunction
Bipolar Transistor (HBT) process, and has been designed for use as the
final RF amplifier in analog cellular phone transmitters or ISM applications
operating at 915MHz. The device is self-contained with the exception of
the output matching network and power supply feed line. A two-bit digital
control provides 4 levels of power control, in 8dB steps.
Features
Single 3V Supply
500mW CW Output Power
31dB Small Signal Gain
Up to 60% Efficiency
Digitally Controlled Output
Power
430MHz to 930MHz Fre-
quency Range
Applications
Analog Communication Sys-
tems
900MHz Spread Spectrum
Systems
400MHz Industrial Radios
Driver Stage for Higher Power
Applications
3V Applications
RF2155
3V Programmable Gain Power Amplifier
RF2155PCBA-41X
Fully Assembled Evaluation Board
Rev B9 DS080128
RoHS Compliant & Pb-Free Product
Package Style: Standard Batwing
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