W150

Rev 1.0, November 24, 2006

Page 9 of 14

Stresses greater than those listed in this table may cause

permanent damage to the device. These represent a stress

rating only. Operation of the device at these or any other condi-

tions above those specified in the operating sections of this

specification is not implied. Maximum conditions for extended

periods may affect reliability.

Parameter

Description

Rating

Unit

Voltage on any pin with respect to GND

–0.5 to +7.0

V

Storage Temperature

–65 to +150

°C

Ambient Temperature under Bias

–55 to +125

°C

Operating Temperature

0 to +70

°C

Input ESD Protection

2 (min)

kV

Parameter

Description

Test Condition

Min.

Typ.

Max.

Unit

Supply Current

3.3V Supply Current

CPU_F, 1:2= 100 MHz

320

mA

2.5V Supply Current

CPU_F, 1:2= 100 MHz

40

mA

Logic Inputs

Input Low Voltage

GND – 0.3

0.8

V

Input High Voltage

2.0

V

–25

A

10

A

Input Low Current (SEL100/66#)

–5

µA

Input High Current (SEL100/66#)

+5

µA

Clock Outputs

Output Low Voltage

50

mV

Output High Voltage

3.1

V

Output High Voltage

2.2

V

Output Low Current

CPU_F, 1:2

60

73

85

mA

PCI_F, PCI1:5

96

110

130

mA

72

92

110

mA

REF0:1

61

71

80

mA

48-MHz

60

70

80

mA

24-MHz

60

70

80

mA

SDRAM0:15, _F

95

110

130

Output High Current

CPU_F, 1:2

43

60

80

mA

PCI_F, PCI1:5

76

96

120

mA

IOAPIC

60

90

130

mA

REF0:1

50

60

72

mA

48-MHz

50

60

72

mA

24-MHz

50

60

72

mA

SDRAM0:15, _F

75

95

120

Notes:

3. Multiple Supplies: The voltage on any input or I/O pin cannot exceed the power pin during power-up. Power supply sequencing is NOT required.

4. All clock outputs loaded with 6" 60

traces with 22-pF capacitors.

5. W150 logic inputs have internal pull-up devices (not to full CMOS level). Logic input FS3 has an internal pull-down device.