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HS012Q Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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HS012Q Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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2 / 5 page ![]() Peak gate power PGM 2 W Peak pulse voltage (Tj=25℃; non-repetitive,off-state;FIG.8) Vpp 1 kV ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Value Unit MIN. TYP. MAX. IGT VD=12V RL=33 Ω - 50 200 μA VGT - 0.6 0.8 V VGD VD=VDRM Tj=110℃ 0.2 - - V IL IG=1.2 IGT - - 4 mA IH IT=0.05A - - 3 mA dV/dt VD=800V Tj=110℃ RGK=1K Ω 1000 - - V /μs VD=800V Tj=110℃ RGK= 220Ω 1500 - - ton IG=10mA IA=20mA IR=2mA Tj=25℃ - 2 - μs toff - 50 - μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM IT=1.5A tp=380 μs Tj=25℃ 1.45 V VTO Threshold voltage Tj=110℃ 0.85 V RD Dynamic Resistance Tj=110℃ 0.16 Ω IDRM VD=VDRM VR=VRRM Tj=25℃ 5 μA IRRM Tj=110℃ 0.15 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case (DC) 25 ℃/W Rth(j-a) junction to ambient (DC) 130 ℃/W 3 of 1 Page 1.0 Rev. huixin@hxkj.hk +86-769-22857832 huixin@hxkj.hk +86-769-22857832 Rev. 1.0 Page 2 of 5 |
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