HS012Q datasheet(3/5 Pages) HUIXIN

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FIG.1 Maximum power dissipation versus

RMS on-state current

FIG.2: RMS on-state current versus case

temperature

0.5

1.5

2.5

0.25

0.5

0.75

1.25

1.5

P(W)

IT(RMS)(A)

66℃

0.2

0.4

0.6

0.8

1.2

1.4

110

IT(RMS)(A)

TC(℃)

FIG.3: RMS on-state current versus ambient

temperature (printed circuit board

FR4,copper thickness:35μm)(full cycle)

FIG.4: Surge peak on-state current versus

number of cycles

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

110

IT(RMS)(A)

Ta(℃)

1.E+0

1.E+1

1.E+2

1.E+3

1.E+4

1.E+5

ITSM(A)

Number of cycles

Tc=25℃,tp=10ms,one cycle,half-sine

FIG.5: On-state characteristics

FIG.6: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width

tp<10ms, and corresponding value of I2t

(dI/dt<10

0A/μs)

0.1

0.5

1.5

2.5

ITM(A)

VTM(V)

Tj=25℃ typ

Tj=25℃ max

Tj=110℃ typ

dI/dt

ITSM

I2t

100

1000

0.01

0.1

ITSM(A), I2t(A2s)

tp(ms)

　ｏｆ　

Ｐａｇｅ　

1.0

Rev.

huixin@hxkj.hk

+86-769-22857832

huixin@hxkj.hk

+86-769-22857832

Rev. 1.0

Ｐａｇｅ

3 ｏｆ 5

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