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HS16HC80F Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # HS16HC80F
Description  HS16HC80F 16A TRIAC
PDF  4 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

HS16HC80F Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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Average gate power dissipation (Tj=150℃)
PG(AV)
1
W
Peak gate power
PGM
10
W
Peak pulse voltage
(Tj=25℃; non-repetitive,off-state;FIG.7)
Vpp
4
kV
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Symbol
Test Condition
Quadrant
Value
Unit
IGT
VD =12V RL =33
Ω
Ⅰ-Ⅱ-Ⅲ
MAX.
35
mA
VGT
Ⅰ-Ⅱ-Ⅲ
MAX.
1
V
VGD
VD =VDRM Tj =150℃
RL =3.3K
Ω
Ⅰ-Ⅱ-Ⅲ
MIN.
0.2
V
IL
IG =1.2IGT
Ⅰ-Ⅲ
MAX.
50
mA
Ⅱ
70
IH
IT =500mA
MAX.
35
mA
dV/dt
VD=540V Gate Open Tj =150℃
MIN.
1200
V
/μs
(dI/dt)c
(dV/dt)c=20V/μs, Tj=150℃
MIN.
15
A/ms
ton
IG=40mA IA=200mA IR=20mA
Tj=25℃
TYP.
8
μs
toff
60
STATIC CHARACTERISTICS
Symbol
Parameter
Value(MAX.)
Unit
VTM
ITM =22.5A tp=380
μs
Tj=25℃
1.4
V
VTO
Threshold voltage
Tj=150℃
0.75
V
RD
Dynamic resistance
Tj=150℃
27
mΩ
IDRM
VD =VDRM VR =VRRM
Tj=25℃
5
μA
IRRM
Tj=150℃
2
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-c)
junction to case (AC)
2.4
℃/W
Rth(j-a)
junction to ambient (AC)
60
℃/W
3
　ｏｆ　
1
Ｐａｇｅ　
1.0
Rev.
huixin@hxkj.hk
+86-769-22857832
huixin@hxkj.hk
+86-769-22857832
Rev. 1.0
Ｐａｇｅ
2 ｏｆ4



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