HS16HC80F datasheet(3/4 Pages) HUIXIN

3 / 4 page

FIG.1 Maximum power dissipation versus RMS

on-state current

FIG.2: RMS on-state current versus case

temperature

P(W)

IT(RMS)(A)

100℃

100

125

150

IT(RMS)(A)

TC(℃)

FIG.3: Surge peak on-state current versus

number of cycles

FIG.4: On-state characteristics

120

150

180

1.E+0

1.E+1

1.E+2

1.E+3

1.E+4

1.E+5

ITSM(A)

Number of cycles

Tc=25℃,tp=20ms,one cycle,sine

100

0.5

1.5

2.5

3.5

ITM(A)

VTM(V)

Tj=25℃ typ

Tj=25℃ max

Tj=150℃ typ

FIG.5: Non-repetitive surge peak on-state current

for a sinusoidal pulse with width tp<20ms, and

corresponding value of I2t (dI/dt<100

A/μs)

FIG.6: Relative variations of gate trigger

current, holding current and latching current

versus junction temperature

dI/dt

ITSM

I2t

100

1000

0.01

0.1

tp(ms)

ITSM(A), I2t(A2s)

0.5

1.5

2.5

-40

-20

100 120 140 160

Tj(℃)

IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)

IGT(I/II)&IH

IGT(III)

　ｏｆ　

Ｐａｇｅ　

1.0

Rev.

huixin@hxkj.hk

+86-769-22857832

huixin@hxkj.hk

+86-769-22857832

Rev. 1.0

Ｐａｇｅ

3 ｏｆ4

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