P-Channel Enhancement Mode Power MOSFET

Description

The

uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

●

V

=-70A

< 8.3 mΩ @ VGS=-10V

●

High density cell design for ultra low Rdson

●

Fully characterized avalanche voltage and current

●

Good stability and uniformity with high EAS

●

Excellent package for good heat dissipation

●

Special process technology for high ESD capability

Application

●

Battery and loading switching

Schematic diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

-

-

-

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

-70

A

Pulsed Drain Current

IDM

-280

A

Maximum Power Dissipation

PD

50

W

Derating factor

0. 28

W/℃

Single pulse avalanche energy

(Note 5)

EAS

158

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 2)

RθJC

3.6

/W

℃

FNK3070PC/D

FNK

FNK3070PC/D

DS(ON)

3070PC

FNK3070PC

TO-251(SIPARK)

DS

R

=-30V, ID

-

-

-

3070PD

FNK3070PD

TO-252(DPARK)

FNK-Semiconductor

Nov.2016.Rev.1.0

1/8

TO-251 top view

TO-252-2L top view