GD32H757VMT7 datasheet(118/151 Pages) GIGADEVICE

118 / 151 page

GD32H757xx Datasheet

117

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

3.3V

VREFS = 11

1.8

—

3.6

Degraded

mode

VREFS = 00

1.71

—

2.8

VREFS = 01

1.71

—

2.4

VREFS = 10

1.71

—

2.1

VREFS = 11

1.71

—

1.8

VREFBUF_O

Voltage Reference

Buffer Output

Normal

mode, at

3.3 V,

-40 ~

85 °C(2)

VREFS = 00

2.493

2.5

2.507

VREFS = 01

2.052

2.0585

2.065

VREFS = 10

1.801

1.8072

1.814

VREFS = 11

1.502

1.5065

1.512

Degraded

mode

VREFS = 00

VDDA -50mV

—

VDDA

VREFS = 01

VDDA -50mV

—

VDDA

VREFS = 10

VDDA -50mV

—

VDDA

VREFS = 11

VDDA -

210mV

—

VDDA

TRIM

Trim step resolution

—

0.14

0.152

Load capacitor

—

0.5

1.5

μF

ESR

Equivalent Serial

Resistor of CL

—

ILOAD

Load current

—

tSTART

Start-up time

CL = 0.5 μF

—

546

—

μs

CL = 1 μF

—

546

—

CL = 1.5 μF

—

546

—

IDDA

(VREFBUF)

VREFBUF

consumption from

VDDA

ILOAD = 0

μA

—

75.4

88.4

μA

ILOAD = 500

μA

—

75.7

88.8

ILOAD = 4

—

75.8

89.1

IINRUSH

Control of maximum

DC current drive on

VREFBUF_OUT during

startup phase

—

Regu(LINE)

Line regulation

2.8 V ≤

VDDA ≤ 3.6

Iload = 500 μA

—

236

—

ppm

Iload = 4 mA

—

264

—

Regu(LOAD

)

Load regulation

500 μA ≤

ILOAD ≤ 4

Normal mode

—

ppm

/ mA

TCOEFF

Temperature drift

−40 °C < TJ < +125 °C

—

TCOEFF(

VREFINT)

+30

ppm

/ °C

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