BB506CFS datasheet(4/9 Pages) RENESAS

Part #	BB506CFS

Description	Built in Biasing Circuit MOS FET IC UHF RF Amplifier

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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4 / 9 page

BB506C

Rev.1.00

Jun. 27, 2005,

page 4 of 8

Main Characteristics

Typical Output Characteristics

Drain to Source Voltage VDS (V)

68 k

Ω

82 k

Ω

100 k

Ω

120 k

Ω

150 k

Ω

R G

= 180

kΩ

VG2S = 4 V

VDS = VG1

Forward Transfer Admittance

vs. Gate1 Voltage

Gate1 Voltage VG1 (V)

VG2S = 0

VDS = 5 V

VG2S =4 V

RG = 100 kΩ

f = 1 kHz

Drain Current vs. Gate1 Voltage

Gate1 Voltage VG1 (V)

VG2S = 1 V

2 V

1 V

3 V

4 V

VDS = 5 V

VG2S = 4 V

RG = 100 kΩ

Maximum Channel Power Dissipation Curve

Ambient Temperature Ta (

°C)

* Value on the glass epoxy board (50 mm

× 40 mm × 1 mm)

400

300

200

100

150

200

Input Capacitance vs.

Gate2 to Source Voltage

Gate2 to Source Voltage VG2S (V)

VDS = 5 V

VG1 = 5 V

RG = 100 kΩ

f = 1 MHz

Drain Current vs. Gate Resistance

100

1000

Gate Resistance RG (kΩ)

VDS = VG1 = 5 V

VG2S = 4 V

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