Rev.1.00

Jun. 27, 2005,

page 1 of 8

BB506C

Built in Biasing Circuit MOS FET IC

UHF RF Amplifier

REJ03G1246-0100

Rev.1.00

Jun. 27, 2005

Features

• Built in Biasing Circuit; To reduce using parts cost & PC board space.

• High gain

PG = 24 dB typ. (f = 900 MHz)

• Low noise

NF = 1.4 dB typ. (f = 900 MHz)

• Low output capacitance

Coss = 1.1 pF typ. (f = 1 MHz)

• Provide mini mold packages: CMPAK-4 (SOT-343mod)

Outline

RENESAS Package code: PTSP0004ZA-A

(Package name: CMPAK-4)

1. Source

2. Gate1

3. Gate2

4. Drain

1

4

3

2

1

4

3

2

Notes:

1.

Marking is “FS-“.

2.

BB506C is individual type number of RENESAS BBFET.

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

6

V

Gate1 to source voltage

+6

–0

V

Gate2 to source voltage

+6

–0

V

Drain current

30

mA

Channel power dissipation

Pch

Note3

250

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 3. Value on the glass epoxy board (50 mm

× 40 mm × 1 mm).