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M58LR128KB Datasheet(PDF) 88 Page - Numonyx B.V |
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M58LR128KB Datasheet(HTML) 88 Page - Numonyx B.V |
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88 / 110 page ![]() Common Flash interface M58LR128KT, M58LR128KB, M58LR256KT, M58LR256KB 88/111 (P+30)h = 13Ah 01h (P+30)h = 13Ah 01h Bank Region 1 (Erase Block Type 1): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for “internal ECC used” BIts 5-7: reserved (P+31)h = 13Bh 03h (P+31)h = 13Bh 03h Bank Region 1 (Erase Block Type 1): Page mode and Synchronous mode capabilities Bit 0: Page-mode reads permitted(5) Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved (P+32)h = 13Ch 06h(3) 0Eh(4) Bank Region 1 Erase Block Type 2 Information Bits 0-15: n+1 = number of identical-sized erase blocks Bits 16-31: n×256 = number of bytes in erase block region (P+33)h = 13Dh 00h (P+34)h = 13Eh 00h (P+35)h = 13Fh 02h (P+36)h = 140h 64h Bank Region 1 (Erase Block Type 2) Minimum block erase cycles × 1000 (P+37)h = 141h 00h (P+38)h = 142h 01h Bank Regions 1 (Erase Block Type 2): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for “internal ECC used” BIts 5-7: reserved (P+39)h = 143h 03h Bank Region 1 (Erase Block Type 2): Page mode and Synchronous mode capabilities Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved 1. The variable P is a pointer that is defined at CFI offset 015h. 2. Bank Regions. There are two Bank Regions, see Table 31, Table 34, Table 37 and Table 40. 3. Applies to M58LR128KT/B only. 4. Applies to M58LR256KT/B only. 5. Although the device supports Page Read mode, this is not described in the datasheet as its use is not advantageous in a multiplexed device. Table 50. Bank and erase block region 1 information (continued) Flash memory (top) Flash memory (bottom) Description Offset(1) Data Offset(1) Data |
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