W UX I C H I N A R E SO URC ES H U A JI N G MI C R O ELE C T R O N I C S C O . , LT D.

P a g e 3 o f 1 0

2 0 19 V 01

○

R

CS50N20 A0R

Source-Drain Diode Characteristics

Symbol

Parameter

Test Conditions

Rating

Units

Min.

Typ.

Max.

IS

Continuous Source Current (Body Diode)

--

--

50

A

ISM

Maximum Pulsed Current (Body Diode)

--

--

200

A

VSD

Diode Forward Voltage

IS=40A,VGS=0V

--

--

1.5

V

trr

Reverse Recovery Time

IS=20A,Tj = 25℃

dIF/dt=100A/us,

VGS=0V

--

261.3

ns

Qrr

Reverse Recovery Charge

--

2770

nC

IRRM

Reverse Recovery Current

--

21.2

A

Pulse width tp≤300µs,δ≤2%

Symbol

Parameter

Max.

Units

RθJC

Junction-to-Case

0.5

℃/W

RθJA

Junction-to-Ambient

62.5

℃/W

a1：Repetitive rating; pulse width limited by maximum junction temperature

a2：L=10mH, I

D=18.5A, Start TJ=25℃

a3：I

SD =20A,di/dt

≤100A/us,V

DD≤ BVDS, Start TJ=25℃

a4：Recommend soldering temperature defined by IPC/JEDEC J-STD 02